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Materials science research on phase transitions in indium selenide for photonic memory; not directly relevant to AI safety but represents the type of domain-specific research that AI systems should accurately understand and cite.
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Abstract
The primary mechanism of optical memristive devices relies on the phase transitions between amorphous-crystalline states. The slow or energy hungry amorphous-crystalline transitions in optical phase-change materials are detrimental to the devices scalability and performance. Leveraging the integrated photonic platform, we demonstrate a single nanosecond pulse triggered nonvolatile and reversible switching between two layered structures of indium selenide (In2Se3). High resolution pair distribution function reveals the detailed atomistic transition pathways between the layered structures. With inter-layer shear glide and isosymmetric phase transition, the switching between alpha and beta structural states contain low re-configurational entropy, allowing reversible switching between layered structures. Broadband refractive index contrast, optical transparency, and volumetric effect in the crystalline-crystalline phase transition are experimentally characterized in molecular beam epitaxy-grown thin films and compared to ab initials calculations. The nonlinear resonator transmission spectra measure an incremental linear loss rate of 3.3 GHz introduced by 1.5 micrometer long In2Se3 covered lay-er, resulting from the combinations of material absorption and scattering.
Summary
This paper demonstrates reversible, nanosecond-scale structural phase transitions between two layered forms of indium selenide (In2Se3) for integrated photonic memory applications. Using high-resolution pair distribution function analysis, the authors reveal that the switching mechanism involves inter-layer shear glide and isosymmetric phase transitions with low reconfigurational entropy, enabling efficient crystalline-to-crystalline transitions rather than the slower amorphous-crystalline transitions typical in optical memristive devices. The work characterizes the broadband refractive index contrast, optical transparency, and loss characteristics of the material in thin films, demonstrating practical feasibility for scalable photonic memory devices.
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[2502.09474] Structural phase transitions between layered Indium Selenide for inte-grated photonic memory
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Physics > Optics
arXiv:2502.09474 (physics)
[Submitted on 13 Feb 2025]
Title: Structural phase transitions between layered Indium Selenide for inte-grated photonic memory
Authors: Tiantian Li , Yong Wang , Wei Li , Dun Mao , Chris J. Benmore , Igor Evangelista , Huadan Xing , Qiu Li , Feifan Wang , Ganesh Sivaraman , Anderson Janotti , Stephanie Law , Tingyi Gu View a PDF of the paper titled Structural phase transitions between layered Indium Selenide for inte-grated photonic memory, by Tiantian Li and 12 other authors
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Abstract: The primary mechanism of optical memristive devices relies on the phase transitions between amorphous-crystalline states. The slow or energy hungry amorphous-crystalline transitions in optical phase-change materials are detrimental to the devices scalability and performance. Leveraging the integrated photonic platform, we demonstrate a single nanosecond pulse triggered nonvolatile and reversible switching between two layered structures of indium selenide (In2Se3). High resolution pair distribution function reveals the detailed atomistic transition pathways between the layered structures. With inter-layer shear glide and isosymmetric phase transition, the switching between alpha and beta structural states contain low re-configurational entropy, allowing reversible switching between layered structures. Broadband refractive index contrast, optical transparency, and volumetric effect in the crystalline-crystalline phase transition are experimentally characterized in molecular beam epitaxy-grown thin films and compared to ab initials calculations. The nonlinear resonator transmission spectra measure an incremental linear loss rate of 3.3 GHz introduced by 1.5 micrometer long In2Se3 covered lay-er, resulting from the combinations of material absorption and scattering.
Subjects:
Optics (physics.optics)
Cite as:
arXiv:2502.09474 [physics.optics]
(or
arXiv:2502.09474v1 [physics.optics] for this version)
https://doi.org/10.48550/arXiv.2502.09474
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arXiv-issued DOI via DataCite
Journal reference:
Advanced Materials 2022
Related DOI :
https://doi.org/10.1002/adma.202108261
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DOI(s) linking to related resources
Submission history
From: Tingyi Gu [ view email ]
[v1]
Thu, 13 Feb 2025 16:38:40 UTC (3,141 KB)
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View a PDF of the paper titled Structural phase transitions between layered Indium Selenide for inte-grated photonic memory, by Tiantian Li and 12 other authors View PDF
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